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中国科学院的科研团队近日在《国际光电工程学会》期刊公布了全固态深紫外(DUV)激光光源研究成果。这项技术通过创新性的固态激光方案，成功输出193nm波长的相干光，理论上可支撑半导体制造工艺延伸至3nm节点，为我国光刻技术自主化开辟了新路径。
值得注意的是，当前全球光刻巨头ASML、尼康、佳能使用的DUV光刻系统，均依赖氟化氙准分子激光技术。这类气体激光器需要持续注入氩氟混合气体，在高压电场中生成193nm波长光子，其系统复杂程度高且能耗较大。相比之下，中科院自主研发的固态方案采用Yb:YAG晶体放大器作为核心光源，通过分光-变频-合成的技术路线，在完全固态结构下实现了同波长激光输出。
科研人员将1030nm基频激光分两路处理：其中一束通过四次谐波转换生成258nm激光，另一束经光学参数放大后形成1553nm激光。这两束激光在串级硼酸锂晶体中混合后，最终产出的193nm激光线宽已控制在0.11pm以内，光谱纯度达到商用准分子激光器标准。尽管目前70mW的平均功率和6kHz频率尚不及传统方案的1%，但固态设计的先天优势已初现端倪。
并且该技术摆脱了对稀有气体的依赖，理论上可使光刻系统体积缩小30%以上。若后续能在功率密度和频率稳定性方面实现突破，或将改变现有DUV光刻设备的技术格局。不过正如论文中坦承的，当前实验室样机与工业级应用仍存在量级差距，需要材料科学和精密制造领域的协同攻关。
这项研究正值全球半导体产业链加速重构之际。尽管距离实际应用尚有距离，但固态DUV光源的突破无疑为国产光刻技术提供了更多可能性选择。在光刻机核心部件长期受制于人的背景下，这种底层技术的原始创新显得尤为重要。
